Tailoring GaAs terahertz radiative properties with surface phonons polaritons
نویسندگان
چکیده
منابع مشابه
Surface-modified GaAs terahertz plasmon emitter
We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown ~LT! GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2010
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3497645